| 摘要 |
PURPOSE:To suppress an unnecessary deposition of silicon polycrystalline film on the region other than a substrate by a method wherein a susceptor and the substrate only are selectively heated up using a radiation-heating means, and mixed gas and carrier gas are flowed in parallel with the substrate. CONSTITUTION:A silicon substrate 24 is placed on the rotary susceptor 25 located in a reaction chamber 29, and the susceptor 25 and the substrate 24 are selectively radiation-heated by an infrared ray lamp 27. The wall 30 of the reaction is forcibly cooled by a water-cooled groove 32. Then, the mixed gas containing a reaction gas is introduced from a feeding pipe 15, and the mixed gas is flowed on the side of the substrate 24 in parallel with the substrate 24 from the jetting hole 14 of a gas rectifying wall 12. The carrier gas containing no reaction gas is introduced from a feeding pipe 20, the carrier gas is flowed on the side of a transmitting plate 31 in parallel with the substrate 24, and the carrier gas is exhausted from a gas exhaust hole 22.
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