| 摘要 |
A floating-gate, electrically-erasable, programmable read-only memory cell is programmed or erased by a high voltage across a thin oxide area between the floating gate and the substrate. A tunnelling phenomena is produced by the high voltage. In order to protect the thin oxide from excessive stress, yet minimize programming time, the maximum electric field is controlled by a dual-slope waveform for the programming voltage Vpp. The values of slope and breakpoints for this dual-slope Vpp voltage are selected by a feedback arrangement which is responsive to process variations in threshold voltage, supply voltage, etc.
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