| 摘要 |
PURPOSE:To obtain an a-SiGe:H film having extremely high photoconductivity by keeping a plasma region away from a substrate by using a reticulate grid. CONSTITUTION:A film is formed while a negative bias (approximately 50V) is applied to a reticulate grid 20 of #30 meshes mounted separate from a substrate 14 by approximately 40mm by employing a DC constant-voltage generator 6. Consequently, a positive column displaying a plasma region is confined between a cathode 12 and the reticulate grid 20. The quality of a material, contamination thereof by an impurity is reduced as much as possible, such as stainless- steel is used as meshes employed as the reticulate grid 20. |
