| 摘要 |
PURPOSE:To obtain the high-reliability semiconductor laser device of GaAlAs group whose wavelength is 750nm or below by specifying the thickness of a Ga1-wAlwAs well layer and a molar ratio of Al. CONSTITUTION:The thickness of a well layer 3a of 8nm+ or -2nm under de Bloglie wavelength is optimum. A molar ratio of Al of a barrier layer of 0.2 is necessary and sufficient. Accordingly, the method for enhancing a molar ratio (w) of Al of a Ga1-wAlwAs well layer by determining a thickness of a Ga1-wAlwAs well 8nm and an Al molar ratio B of a Ga1-BAlBAs barrier w+0.2 is the optimum designed orientation of the quantum well semiconductor laser device. Namely, it is overpoweringly advantageous for realizing the wavelength of 750nm or below.
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