| 摘要 |
PURPOSE:To increase the strength against breakdown and to increase an allowable current, by providing the second impurity region, which includes the third impurity region that is to become a collector part, in an element region surrounded by an embedded region and the first impurity region that is to become an emitter part, and using the second region as a base part. CONSTITUTION:In a semiconductor substrate 20, an epitaxial layer 21 and an N-type embedded region 22 are formed. In the layer 21, an N-type first impurity region 24 is formed so that an element region 23 is formed in the layer 21, and a collector layer is formed. In the region 23, a P-type second impurity region 25 is formed, and a base layer is formed. In an inner region 26 surrounded by the region 25, an N-type third impurity region 27 is formed, and a collector layer is formed. In this constitution, a region, where a current flows, becomes wide, and the allowable current is increased. Since the emitter part becomes long, the value of the protecting resistance is made large, and the strength against breakdown can be increased.
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