| 摘要 |
PURPOSE:To shorten the manufacturing process of the titled semiconductor device by a method wherein, after an electrode window is provided on one of conductive regions, conductive type impurities are introduced into the window, and then an electrode window is provided on the other conductive region, thereby enabling to reduce the masking process to two times from the three times required in the method heretofore in use. CONSTITUTION:The first insulating film 2 is selectivity formed on a substrate 1. After an N-well 1', an N-type diffusion region 31 and a P-type diffusion region 32 are formed by performing an ordinary method, the second insulating film 4 is formed using PSG as a material. Then, after a photoresist 7 is formed, an electrode 61 is formed by removing the photoresist by performing an exposure in the first masking process. An N-type auxiliary diffusion region 31 is formed by ion-implanting phosphorus and the like, and the photoresist 7 is removed. Then, a photoresist 7' is formed, an electrode window 62 is formed by removing the photoresist by performing an exposure in the second masking process, boron and the like is ion-implanted, and a P-type auxiliary diffusion region 32' is formed.
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