| 摘要 |
PURPOSE:To reduce the density of silicon cluster and defect density by a method wherein a silicon oxide film 500-3,000Angstrom thick is formed on a substrate and then the silicon oxide film is etched at the speed not exceeding 2Angstrom /sec. CONSTITUTION:A silicon oxide film 2 500-3,000Angstrom thick is formed by oxidizing a silicon semiconductor substrate by direct reaction at the temperature of 900-1,100 deg.C. The thickness of oxide film 2 is measured by an ellipsometer to decide the amount to be removed for specifying the thickness thereof. Later the silicon oxide film 2 is thinned by etching process at the speed not exceeding 2Angstrom /sec to form a thin oxide film 3. Through these procedures, the density of silicon cluster, interfacial level and defect can be reduced.
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