| 摘要 |
PURPOSE:To easily implement a shallow junction by adding a process of making a low density n-type region amorphous by implanting thereinto silicon ions or inert gas ions, thereby causing the crystallizability to be recovered by rapid annealing or low-temperature annealing. CONSTITUTION:A gate electrode comprising a gate oxide film 2 and a polycrystalline silicon 3 is formed on a p-type silicon substrate 1, the then with the gate electrode as a mask, for instance, P<+> ions are implanted, forming a low dinsity n-type region 4 amorphous 21, and subsequently an oxide film 9 is deposited by LPCVD. Further, the oxide film 9 is left only on the side walls of the gate by anisotropic etching, and thereafter with the gate electrode 20 and the oxide films 10 on the gate side walls as a mask, for instance, As<+> ions are implanted to form a high density n-type region 5, forming a LDD structure. Thereafter, the source and drain regions are activated by low temperature annealing such as rapid annealing, and the processes such as the opening of a contact window and the electrode wiring are performed.
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