摘要 |
An integrated circuit structure includes both low-voltage n-channel and p-channel MOS transistors (LV-NMOS transistors and LV-PMOS transistors) and high-voltage n-channel and p-channel MOS transistors (HV-NMOS transistors and HV-PMOS transistors). There are formed at the same time first p- regions for the compartments of the LV-NMOS transistors, second p- regions in which only the sources and channels of the HV-NMOS transistors are incorporated, and third p- regions in which only the drains of the HV-PMOS transistors are incorporated.
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