(A) ;METHOD AND APPARATUS FOR DISSOLVING POLYMER INTO WATER

摘要

PURPOSE:To facilitate correction of a minute defect, by covering the defect or an omitted part of mask pattern formed on a transparent substrate and its surrounding adjacent surface with a material capable of forming a eutectic alloy with the metal of the mask material. CONSTITUTION:Layer 6 of a metal such as gold is formed on pattern 2 having defective part 3 freed of a part of metallic thin film pattern 2 formed on glass substrate 1. Polycrystal silicon layer 7 is covered on the whole surface of substrate 1 including the surface of layer 6 in 0.1-1mum thickness, and part 3 is irradiated with high density laser beams L to locally form eutectic alloy part 8 of gold and silicon. Silicon layer 7 except part 3 not converted into the alloy is removed by gas plasma. Since adhesion between substrate 1 and part 8 is great and removal speed of part 8 by the gas plasma is low, part 8 remains on minute defect part 3, and resists to mask washing.