发明名称 DRIVING CIRCUIT FOR SWITCHING SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To obtain a high DC voltage by multiplexing a floating circuit part. CONSTITUTION:When a clock signal as a symmetrical square wave voltage of high frequency is inputted to an input terminal 110 of an inverter circuit 109, a square wave voltage different in phase from the input signal by 180 deg. appears as the output voltage. The input-side voltage and the output-side voltage are applied to capacitors 101 and 102, and charging/discharging currents are flowed to capacitors 101 and 102. At this time, a DC voltage with a terminal 113 as the positive is obtained in both ends of a resistor 107. Similarly, charging/ discharging currents are flowed to capacitors 103 and 104 in both ends of a resistor 108 and are rectified by a single phase diode bridge 106, and a DC voltage with a terminal 114 as the positive is generated. Thus, a driving voltage of a switching semiconductor element of high floating is obtained.
申请公布号 JPS61277226(A) 申请公布日期 1986.12.08
申请号 JP19850118827 申请日期 1985.06.03
申请人 HITACHI LTD;HITACHI HARAMACHI SEMICONDUCTOR LTD 发明人 SUGAYAMA SHIGERU;KARIYA TADAAKI;SHIMURA TATSUO;TOMITA SHIGEO
分类号 H03K17/687;H03K17/06 主分类号 H03K17/687
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