| 摘要 |
PURPOSE:To facilitate a flattening of the lower layer resist even though the lower layer film is thin, and moreover, to enable to easily form the microscopic resist patterns on the step of the substrate in such a way that the patterning to perform on the upper layer resists is prevented from being subjected to the effect of the base film and the effect of the step of the substrate, by a method wherein a novolak resin resist is sued for the lower layer resist, UV light having a specific wavelength is projected on the lower layer resist, and after that, a heat treatment is further performed to the lower layer resist. CONSTITUTION:When the microscopic resist patterns are formed using a multilayer resist forming method, a novolak resin resist is used as the lower layer resist, and for forming this lower layer resist, a process, wherein light having a wavelength of 350nm-450nm is projected on the novolak resin resist, and a process, wherein a heat treatment is performed to the novolak resin resist after the foregoing light irradiation process, are provided. For example, a novolak resin lower layer resist (lower layer resist to be formed after a novolak resin is applied on a semiconductor substrate 1) 2 is applied on the semiconductor substrate 1 having its step, UV light having a wavelength of 350nm-450nm is projected (UV light irradiation) 3 on the resist 2, and after that, a heat treatment of 150 deg.C-200 deg.C is performed to the resist 2 and a flat lower layer resist (lower layer resist to be formed after the heat treatment is performed) 4 is formed. Then, an intermediate layer (SiO2 layer) 5 is formed, upper layer resists 6 are applied thereon and a patterning is performed on the resists 6. |
