| 摘要 |
PURPOSE:To improve a manufacturing process and the generation of damage largely by unnecessitating the positional alignment of element regions in both substrates in a process in which metallic films are applied onto the semiconductor substrates and the metallic films on both substrates are connected mutually. CONSTITUTION:A metal such as n-type indium-antimony (InSb) is used as a substrate 1, the ions of a metal such as beryllium (Be) are implanted to the whole surface of the substrate 1 to form a p-type region 2, and a metallic film 4 brought into ohmic-contact with the p-type region 2 is applied. On the other hand, an insulating film 6 with contact holes 6h is shaped onto another semiconductor substrate 5 to which a signal processing circuit for a CCD, etc. is formed, and a metallic film 7 is applied similarly. The metallic film 4 and the metallic film 7 are faced oppositely and both substrates 1, 5 are superposed, and the metallic films 4 and 7 are connected mutually. The photoelectric conversion element substrate 1, the metallic film 4 and the metallic film 7 are each separated mutually, and the state that a plurality of photoelectric conversion elements are connected severally to the signal processing circuit is shaped. An insulator 8 is buried into grooves 1s, and necessary electrode-wiring 9 are disposed onto the semiconductor substrate through a conventional technique.
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