| 摘要 |
PURPOSE:To stabilize the operation of an IC by superposing an N-type epitaxial layer on a P-type buried layer on a P-type Si substrate, and using a junction as a diode. CONSTITUTION:An N-type epitaxial layer 6 on a P-type Si substrate 7 buried with an N-type layer 3 is provided on an island separated by a P<+> type layer 2 and a P-type layer 1, and a lateral pnp transistor 12 is provided. An N<+> type layer 5 is provided in the island separated by the layer 1 which arrives at the P-type buried layer 2, and a junction is formed by the layers 6, 2. Since the base density of a parasitic transistor 16 is enhanced in this construction to reduce hFE, the operation of the parasitic transistor can be suppressed to stabilize the operation of an IC.
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