| 摘要 |
PURPOSE:To increase withstand voltage without extending a field ring region by forming a groove to the surface of a field ring region forming section and shaping the field ring resion in depth deeper than a base region in said groove region. CONSTITUTION:A high withstand-voltage bipolar transistor is constituted by an emitter region 1, a base region 2, a collector low-concentration region 5, a collector high-concentration region 6 and a field ring region 3 and the like in the same manner as a conventional device, but a groove 4 is shaped to the surface of a field ring region forming section, and the field ring 3 is formed in depth deeper than the base region 2 in the region of the groove 4. Accordingly, a bipolar transistor, withstand voltage of which is made higher than the conventional device without extending the field ring region, can be acquired.
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