| 摘要 |
PURPOSE:To form a P-N junction at a uniform depth for the purpose of decreasing the ununiformity of luminance of emitted light, by forming a diffusion protecting SiO2 film on the surface of a semiconductor substrate for protecting diffusion before forming an Al2O3 film, a PSG film etc. CONSTITUTION:A diffusion protecting SiO2 film 5 is formed on an N-type compound semiconductor substrate 1. An Al2O3 film 2 and a PSG film 3 are deposited in that order and then resist 10 is applied on the film 5. These films 2, 3 and 10 are then selectively removed to form an opening 11 in which the surface of the film 5 is exposed. The resist 10 is removed completely, and an impurity is diffused in the substrate 1 through the film 5 so as to form a P-type diffused layer 9. The film 5 is the removed and an Al layer 12 is formed on the entire surface of the substrate 1. The layer 12 is patterned to form an anode electrode 13. Finally, a cathode electrode 14 is provided on the rear face of the substrate 1. According to this construction, the diffusion protecting SiO2 film can be formed uniformly before applying the resist, and it allows the formation of a P-N junction at a uniform depth. Consequently, the ununiformity of luminance of emitted light can be decreased. |
