| 摘要 |
PURPOSE:To obtain a high withstand voltage gap cell type amorphous Si image sensor having a high speed frequency response, by employing a-Si:H with an H-atom content below 20atom%, as photoconductive films for connecting first, second and third discrete electrodes each opposing with predetermied intervals spaced. CONSTITUTION:On a glass substrate 111, discrete conductive layers 2, 3, 5 of Cr each having a width of d1 and a pitch of d2 and opposing with predetermined intervals d3 and d4 spaced, are formed. By making d3=d4, a large amplitude signal can be provided at the output terminals 4. Housing it into a glow discharge apparatus, a-Si:H films 7, 7' with an H-atom content below 20atom% of a sum atomic weight of H and Si, or preferably below 5atom% are formed on the spaced gaps d3 and d4. When dc voltage is applied across the common electrodes 1, 6, light with a given wavelength is always projected onto the film 7', and an on-off signal of light is supplied from the same light source onto the film 7, output signal voltage can be provided at the output terminals 4, having less unevenness and extremely better frequency response.
|
