| 摘要 |
PURPOSE:To enable to bring the temperature of the substrate of an Si wafer into a low temperature at the time of surface purification by a method wherein pulse laser light having a large absorptivity coefficient to silicon is projected on the surface of the Si wafer, the extreme surface layer thereof only is instantaneously heated and a gas etching is performed on the surface layer by making HCl react to silicon atoms existing on the surface of the Si wafer. CONSTITUTION:A substrate 2 is heated at the prescribed temperature in hydrogen current and the natural oxide film on the surface of the substrate is made to evaporate. Then chlorine gas is injected in an ultraviolet pulse laser 1, and at the same time, a gas etching is performed on the surface layer of the Si wafer in the desired etching amount only by projecting ultraviolet pulse laser light on the surface of the Si wafer 2 to obtain the smooth surface of the Si wafer. The pulse light to coincide to such a purpose can be obtained by an excimer laser. By this way, the temperature of the substrate can be brought into a low temperature at the time of surface purification in a vapor-phase epitaxial process. As a result, the manufacturing process of the very-large-scale integrated circuit can be turned into a low-temperature manufacturing one.
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