| 摘要 |
PURPOSE:To protect an element against an electrostatic external force and a radioactive ray by providing a conductive film through an insulating protective film to coat a semiconductor element, and connecting the ground potential of an element. CONSTITUTION:An insulating protective film 27 is formed on a semiconductor element formed as prescribed to form an electrode window 28. A metal film 29 of the same type as wirings is coated by a CVD method or a coating method. The temperature at coating time is 550 deg.C or lower to avoid the formation of an element, and the thickness is of the degree not to disconnect. A window 30 is opened at the film 29, partly superposed with an electrode 32 of the ground potential to form a connector 31. The film 29 is connected with the ground potential in the element with the construction, and an electrostatic external force is particularly shielded to obtain an semiconductor device having no damage nor characteristic deterioration.
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