发明名称 |
MARKING METHOD FOR RESIN-SEALED TYPE SEMICONDUCTOR DEVICE |
摘要 |
<p>PURPOSE:To realize a simplified re-marking technique by a method wherein a coating of an liquid epoxy resin containing a pigment that colors under laser ivadiation is provided on a surface whereon marking has already been accomplished and a prescribed region in the once-marked surface experiences remarking when exposed to a laser beam. CONSTITUTION:To a once-marked surface 5 of a resin-sealed type semiconductor device main body, a coating is applied containing a liquid epoxy resin 7 containing a pigment to color under laser illumination. A prescribed region of the once-marked surface 5 is subjected to laser illumination for re-marking. For example, an aniline black-based Co-Mn-Ni alloy dyestuff is a pigment capable of coloring when exposed to heat generated under laser ivadiation. A layer not less than 20mum thick of a liquid epoxy resin 7 containing approximately 0.5% said pigment is laid by brushing or screen printing on a once- marked surface 5 and is exposed to the temperature of 150 deg.C for curing for not shorter than 3 hours. The once-marked surface 5 is then subjected to laser ivadiation for the correction of a product ranking mark to 'BQ'.</p> |
申请公布号 |
JPS61276236(A) |
申请公布日期 |
1986.12.06 |
申请号 |
JP19850117413 |
申请日期 |
1985.05.30 |
申请人 |
MATSUSHITA ELECTRONICS CORP |
发明人 |
FUJII HIROYUKI;KURATANI MASAYUKI |
分类号 |
H01L23/00;G09F7/16;H01L23/544 |
主分类号 |
H01L23/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|