| 摘要 |
PURPOSE:To give unit cells a correct voltage level, and to prevent a voltage drop in the direction of a cell fine by cutting open the cell line in the direction orthogonal to the longitudinal direction of the cell line at regular intervals, passing second power supply lines into clearances in the cell line, forming contact holes to crossed sections with first power supply lines and electrically connecting the second power supply lines. CONSTITUTION:Regions 31, which are shaped by unit cells 32, in which all functional circuits are housed onto semiconductor substrates, the surfaces thereof have high- concentration impurity regions 34, 35, while being cut open at predetermined positions, cell lines 111, 112, 113 with first power supply lines 121, 122, and second power supply lines 40, 41, which are connected electrically by said first power supply lines 121, 122 and said cut-open regions 31 and extended in the direction orthogonal to the longitu dinal direction of said cell lines 111, 112, 113, are mounted. The previously prepared ells 32 are shaped to the cut-open regions 31, and upper sections are used as N channel regions and lower sections as P channel regions while employing line 33 as boundaries in the cells 32. The P<+> type diffusion layers (high-concentration impurity regions) 34 are formed into the N channel regions, and the N<+> type diffusion layers (high- concentration impurity regions) 35 are shaped into other P channel regions. |
