| 摘要 |
PURPOSE:To prevent a resist film from exfoliating and a transparent conductive film from damaging by dipping a thin film formed by a sputtering method on a substrate in a mixture of aqueous organic acid solution and hydrogen peroxide water, thereby shortening a micro-processing time due to corrosion of the film. CONSTITUTION:A thin film is formed by a sputtering method with praseodymium oxide, manganese oxide or mixture of both as a target on a substrate. The film is dipped in a mixture solution of aqueous organic acid solution and hydrogen peroxide water. The aqueous organic acid solution is used as aqueous tartaric acid solution or aqueous citric acid solution, and the temperature of mixture is held at 50-80 deg.C. The micro-processing time based on corrosion of the film is shortened to prevent the resist film from exfoliating and a transparent conductive film from damaging.
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