| 摘要 |
PURPOSE:To obtain stable surface characteristics of a semiconductor device by adhering a palladium film on the etched sides of a silicon nitride film and a silicon nitride film of the surface of a substrate with, thereby preventing ions from invading to the silicon oxide film and excess hydrogen from exhausting to the exterior. CONSTITUTION:A silicon oxide film 2 and a silicon nitride film 3 are formed as protective films on the surface of a semiconductor substrate 1. The sides of the films 2, 3 are etched, and a palladium film 4 is adhered on the sectional surfaces. Thus, it can prevent Na<+> ions from the exterior from invading to the film 2 and exhaust excess hydrogen contained in the film 2 through the film 4, thereby stabilizing the surface characteristics of the substrate 1.
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