发明名称 DETECTION FOR TEMPERATURE OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To execute a setting of the conditions for laser beam irradiation by a method wherein aluminum films, which generate a change in the configuration thereof and a change in the colors thereof at a specific temperature, are embedded between laminated films and a change in the state of the aluminum films is observed according to the conditions of laser beam irradiation. CONSTITUTION:First aluminum films 12 are evaporated on the surface of a silicon substrate 11, and after that, an aluminum film is formed in a longitudinal line form by performing a patterning and an etching using a photolithography. Then, a silicon dioxide film 13 is laminated by a CVD method and second aluminum films 14 are formed on the surface thereof in the longitudinal direction. Subsequently a polycrystalline silicon film 15 is laminated on the upper layer thereof and after third aluminum films 16 are formed, a silicon oxide film 17 and a polycrystalline silicon film 18 are laminated in order. After such a device for temperature detection is made, an argon laser beam 19 is projected from the surface of the polycrystalline silicon film 18 while being scanned on the surface. The device finished in laser beam inadiation for temperature detection is destroyed, the state of the section thereof is observed and an adjustment of the setting conditions for laser beam irradiation is executed according to a change in the state of the aluminum films or a change in the colors thereof.
申请公布号 JPS61276211(A) 申请公布日期 1986.12.06
申请号 JP19850118525 申请日期 1985.05.30
申请人 FUJITSU LTD 发明人 SASAKI NOBUO
分类号 H01L27/00;H01L21/20;H01L21/263;H01L21/66 主分类号 H01L27/00
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