| 摘要 |
PURPOSE:To form a tapered through hole, and to flatten the surface of an insulating film by melting to soften the opening edge of a photoresist mask, and then subjecting the photoresist and an insulating film of the lower layer of the photoresist to RIE method at equal speed. CONSTITUTION:Wirings 4 are provided through an SiO film 2 on an Si substrate 1 to form a resist pattern 5 on a CVD SiO2 film 3. A heat treating temperature is regulated to taper a hole, and the surface of the resist is flattened. Before heat treating, when a UV light is emitted, the flatness is increased. Then, the resist 5 and the film 3 are subjected to RIE method at equal speed to simultaneously perform the opening and the flattening of the film 3. Then the second layer is wired at 6. With this construction, the tapered electrode window is formed and an interlayer insulating film is flattened with simple steps to prevent upper layer wirings from disconnecting.
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