| 摘要 |
PURPOSE:To improve the etching accuracy of a semiconductor in a semiconductor manufacturing device for etching by utilizing reaction in a plasma by forming an ultrafine irregular surface on the surface of a substance which is applied on the periphery of a substance to be etched, thereby equalizing the etching rate. CONSTITUTION:A substance 1 to be formed with ultrafine irregular surface on the surface is disposed closely on the periphery of a semiconductor wafer 1 to be etched. Thus, the surface area of the substance 1 is more increased than before, a parallel wall surface to the incident direction of ions is formed, an isotropic etchant can be effectively absorbed to the surface to suppress the etching rate at the periphery of the wafer 2 and the uniformity is improved. Accordingly, the etching accuracy is improved to prevent the sidewise etching.
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