发明名称 FORMATION OF DEPOSITED FILM
摘要 PURPOSE:To improve the electrical, optical and mechanical characteristics of the resulting film by introducing a compound contg. Ge and halogen and active species of a compound contg. Ge into a film forming space and by applying heat energy to bring them into a reaction. CONSTITUTION:Active species are produced from a compound contg. Ge for film formation. The compound interacts chemically with a compound contg. Ge and halogen such as a compound represented by a formula GeuY2u+2 (where u is an integer of >=1 and Y is F, Cl, Br or I). The active species and the compound contg. Ge and halogen are introduced into a film forming space, where they are brought into a chemical reaction by applying heat energy to form a deposited film on a substrate.
申请公布号 JPS61276974(A) 申请公布日期 1986.12.06
申请号 JP19850115311 申请日期 1985.05.30
申请人 CANON INC 发明人 ISHIHARA SHUNICHI;KANAI MASAHIRO;ONUKI YUKIHIKO;ODA TOSHIMICHI;SHIMIZU ISAMU
分类号 C23C16/08;G03G5/08;G03G5/082 主分类号 C23C16/08
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