| 摘要 |
PURPOSE:To form a transparent substrate, having a silicon oxide film of uneven shape formed on the substrate surface, and suitable for substrates in solar cells, by dipping a base material in a saturated aqueous solution of silicon oxide in hydrosilicofluoric acid containing boric acid added thereto under specific conditions. CONSTITUTION:An aqueous solution of hydrosilicofluoric acid in about >=2mol/ lconcentration is saturated with silicon oxide, and the resultant saturated solution is then diluted with water to prepare a treating solution in about <=2mol/l hudrosilicofluoric acid concentration. An aqueous solution of boric acid is then dropped thereto to supersaturate the silicon oxide, and deposit lumps of the silicon oxide therein. A substrate, e.g. flat glassor plastic sheet, is then dipped in the treating solution while continuing the dropping of an adequate amount of the aqueous solution of the boric acid thereto to bring the treating solution in which the lumps of the silicon oxide are suspended to contact with the substrate surface at 0.2-8cm/min speed to form a silicon oxide film of uneven shape on the substrate surface.
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