VAPOR-PHASE GROWTH METHOD FOR GAAS THIN FILM

摘要

PURPOSE:To obtain the titled GaAs thin film without any variance in carrier density distribution by mixing gaseous arsine, gaseous org. gallium and a specified gas and growing a GaAs crystal on a heated GaAs substrate. CONSTITUTION:A GaAs substrate 7 supported by a susceptor 6 is set in a reac tion tube 1, an electric current is passed through a high-frequency induction heating coil 5 and the substrate 7 is heated to 700-800 deg.C. Then a raw gas consisting of an org. gallium gas and gaseous arsine added with a gas contg. a group-VI element as the component element such as H2S is introduced from a raw gas introducing port into the reaction tube 1 and thermally decomposed to grow an n-type GaAs crystal on the substrate 7. Consequently, the carrier density can be controlled to <=5% and an electronic device can be efficiently formed.