| 摘要 |
PURPOSE:To obtain a resist not swelling during development and superior in resolution by using a resist material composed of a mixture of a phenolic polymer and a low molecular weight compound. CONSTITUTION:The negative type resist material is composed of a mixture of the phenolic polymer, such as polyhydroxystyrene, and a low molecular weight compound to be allowed to release activated halogen by irradiation of ionizing radiation, such as nitrobenzylchloride. Such a resist material reacts without any cross-linking, thus permitting the obtained resist material not to swell during development, and consequently, to form a pattern extremely high in resolution useful for microfabrication process of semiconductor elements and the like. |
