| 摘要 |
PURPOSE:To enable self-alignment formation of an electrode or a wiring by causing a metal or metal silicide to selectively grow on the semiconductor substrate under the opening of a first insulation layer and on the side exposed in the opening of a species layer, and forming a metal or metal silicide layer connecting the semiconductor substrate and the seed layer. CONSTITUTION:Formed on a semiconductor substrate 11 are a first insulation layer 12, a layer 13 (seed layer) becoming the seed of the selective growth of a metal or metal silicide and being conductive, and a second insulation layer 14. After forming an opening 15, and the seed layer 13 is applied with side etching, thereby excavating an opening 16 extending under the second insulation layer 14. Thereafter, with the seed layer as a mask the first insulation layer 12 is applied with patterning, a metal or metal silicide is caused to selectively grow on the semiconductor substrate 11 under the opening 16 and on the side of the species layer 13, thereby connecting the semiconductor substrate 11 and the seed layer 13 by a metal or metal silicide layer 17. The silicide layer 17 is etched, thereby removing the metal or metal silicide also under the opening 15 of the second insulation layer 14.
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