| 摘要 |
PURPOSE:To improve various characteristics of a J-FET, especially a mutual conductance, by introducing respective impurities forming a P-N junction by atomic plane doping. CONSTITUTION:On the (100) face of a semi-insulating GaAs substrate 1, a non- doped GaAs buffer layer 2, a plane 3 of Si atomic plane doping, a non-doped GaAs layer 4, a plane 5 of Be atomic plane doping and a non-doped GaAs layer 6 are successively formed by MBE method. Mesa etching is carried out for separation between elements and a gate electrode 7 which has ohmic contact with the GaAs layer 6 is formed on the layer 6. Si ions are implanted by utilizing the gate electrode 7 as a mask and N<+> type contact regions 8 are formed by a heat treatment with a halogen lamp or the like. Source and drain electrodes 9 which have ohmic contact with the regions 8 are formed with gold-germanium/gold (AuGe/Au). |
