发明名称 GATE TURN-OFF THYRISTOR
摘要 PURPOSE:To reduce a stray inductance of a snubber circuit connected to a GTO thyristor and facilitate increase of a controllable current and operation at a low temperature by burying the snubber circuit into the insulating ceramic body of the container of the GTO thyristor. CONSTITUTION:Both connection electrodes 3 and 4 are surrounded by an annular ceramic body 7 and connected to, for instance, the surface metallized layer of the ceramic body 7 by hard soldering. In addition to a gate lead 5 which is let through the ceramic body 7, a low induction capacitor 8, a non-inductive resistor 9 and a diode 10 are buried inside the ceramic body 7. The one end of the capacitor 8 is connected to the cathode connection electrode 3 by a copper bar 1, which is buried likewise, through the resistor 9 connected in parallel and the diode 10 and the other end is connected to the anode connection electrode 4. A part of the surface of the resistor 9 is exposed out of the ceramic body 7 and cooling fins 12 are attached to it while being completely isolated electrically from the resistor 9 so as to avoid a temperature rise due to the heat generation.
申请公布号 JPS61274363(A) 申请公布日期 1986.12.04
申请号 JP19850115642 申请日期 1985.05.29
申请人 FUJI ELECTRIC CO LTD 发明人 TAKAHASHI YOSHIKAZU
分类号 H01L29/74 主分类号 H01L29/74
代理机构 代理人
主权项
地址