FERROELECTRIC ELEMENT AND MANUFACTURE THEREOF

摘要

PURPOSE:To enable the selection of a directional property of crystallizability of a substrate and a ferroelectric thin film according to the use by making at lest 40% of the plane parallel to a surface of the substrate of the ferroelectric thin film into (101) face of ferroelectric crystal of perovskite structure. CONSTITUTION:The ferroelectric element is formed basically by effecting the first step for vapor depositing a ferroelectric substance on the plane for vapor deposition of the substrate heated to a specified temperature and the second step for subjecting the thin film of ferroelectric substance which was vapor deposited on the plane for vapor deposition during the first step to the heat treatment at a specified temperature. In the second step, the ferroelectric substance vapor deposited on the plane for vapor deposition during the first step is treated by heating at a specified temperature to cause the crystal growth by which at least 40% of the plane parallel to a surface of the substrate of ferroelectric thin film becomes (101) face of ferroelectric crystal of perovskite structure. The heat treatment is made by heating the ferroelectric substance vapor deposited on the plane for vapor deposition of the substrate to temperature 500 deg.C or over. More particularly, the heating temperature in a range 550-700 deg.C is preferable for being preset to effect the heat treatment.