| 摘要 |
PURPOSE:To obtain a semiconductor resistance element with high density which does not create variation of resistance values by forming the first impurity region, which is a main part of the resistance element, and the second impurity regions formed at both ends of the first impurity region, with the identical width. CONSTITUTION:The first P-type impurity region 102 is formed on the surface of an N-type semiconductor substrate 101 and the second P-type impurity regions 103 are formed at both ends of the first impurity region 102. The width W1 of the second P-type impurity region 103 is so formed as to be equal to the width W2 of the first P-type impurity region 102 so that the distance between two adjacent resistance elements can be determined between the adjacent first P-type impurity regions 102 which are the main parts of the resistance elements. A silicon oxide film 104 is formed on the surface of the N-type semiconductor substrate 101 and Al electrodes 106 are connected to the second P-type impurity regions 103 through contact holes 105. |
