| 发明名称 |
Method for producing semiconductor device. |
| 摘要 |
<p>In the production method of a semiconductor device, a connection layer 6 is formed on an insulating layer 3 according to two steps of irradiating, in the atmosphere of a reaction gas, a region in which the connection layer is to be formed selectively by light 5 having a wavelength in a range of from 200 to 1000 nm, and depositing selectively a connection layer 6 forming substance by a CVD method in the light irradiated region until a desired thickness of the substance is obtained.</p> |
| 申请公布号 |
EP0203800(A2) |
申请公布日期 |
1986.12.03 |
| 申请号 |
EP19860303973 |
申请日期 |
1986.05.23 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ITO, HITOSHI;MORIYA, TAKAHIKO |
| 分类号 |
H01L21/268;H01L21/285;H01L21/3205;H01L21/768;(IPC1-7):H01L21/28;H01L21/60 |
主分类号 |
H01L21/268 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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