| 摘要 |
PURPOSE:To protect a semiconductor integrated circuit containing a photodetecting element from noises by beams, and to display the characteristics of the integrated circuit sufficiently by forming an optical incidence preventive film mainly comprising germanium just above a signal processing circuit section in the semiconductor integrated circuit including the photodetecting element. CONSTITUTION:The formation of photodetecting elements 2 and the application of a circuit wiring 6 are completed, and a CVD oxide film 7 and a plasma nitride film 8 are applied severally so that photodetecting sections are protected only by the CVD oxide film 7 and a signal processing circuit section is protected by two layers of the CVD oxide film 7 and the plasma nitride film 8. Amorphous germanium is deposited on a substrate on which the nitride film 8 is applied completely. A germanium film on the photodetecting sections is removed through plasma etching while using a resist pattern, to only the photodetecting sections thereof windows are bored, as a mask, thus shaping an optical incidence preventive film 9. Accordingly, the signal processing circuit section is light- shielded, thus protecting a semiconductor integrated circuit containing the photodetecting elements from noises due to beams. |
