| 摘要 |
PURPOSE:To realize the electrical effective channel length of a submicron region with excellent controllability, and to inhibit the generation of hot electrons by forming a first conduction type semiconductor layer at the central section in the channel length direction and second conduction type semiconductor layers on both sides of the first conduction type semiconductor layer. CONSTITUTION:A thermal oxide film 22 and an silicon nitride film 23 are formed onto a P-type Si substrate 21, a field oxide film 24 is shaped while using the film 23 as a mask, and the films 23, 22 are removed. A gate oxide film 25 is shaped, and the ions of B and As are implanted. A polycrystalline silicon layer 26 is deposited, and P ions are implanted and changed into an N type. The layer 26 and the film 25 are patterned. A patterned polycrystalline silicon layer 27 is irradiated by focus ion beams, and As ions are implanted in order to form a source, a drain and a diffusion layer. A P<+> type polycrystalline silicon layer 27a and N<+> type polycrystalline silicon layers 27b, 27c are shaped. N<+> type source-drain regions 28, 29 and an N-type diffusion layer 30 are formed simultaneously. |
