| 摘要 |
PURPOSE:To form an effective optical waveguide with excellent reproducibility by applying a first semiconductor layer and a second semiconductor layer onto an active layer, removing one part of the second semiconductor layer to shape a groove and applying a third semiconductor layer while covering the groove. CONSTITUTION:A first layer 1 consisting of Ga1-xAlxAs as a clad layer, a second layer 2 composed of Ga4d1-yAlyAs as an active layer, a third layer 3 consisting of Ga1-zAlz as a clad layer, a fourth layer 4 composed of Ga1-aAlaAs, and a fifth layer 5 consisting of Ga1-bAlbAs as a growth promoting layer are grown onto a substrate 11 in succession. One parts of the fifth layer 5 and the fourth layer 4 are removed until the third layer 3 is exposed to shape a groove 8. A sixth layer composed of Ga1-cAlcAs as a third semiconductor layer is grown as a clad layer while coating the groove 8, where the mixing ratio of A4l is represented by y<x, y<z, a>=0.45>=z, a>c and the mixing ratio of the fifth layer 5 is represented by 0.2>=b>=0. |
