| 摘要 |
PURPOSE:To make uniform the distribution of reaction gas flow on the surface of a semiconductor wafer by a method wherein a reactive gas exhaust hole is provided both on the outer furnace wall and the inner furnace wall respectively. CONSTITUTION:A duct 10 is provided at the lower part of the outer furnace wall 1, and reaction gas is exhausted through the intermediary of a damper 12a. A duct 10' is also provided on the inner furnace wall 2, and the reaction gas is exhausted through the intermediary of damper 12b. The reaction gas circulated as shown by the arrow (a) is branched off as shown by the arrow (b') and (d) in the vicinity of a wafer 9. The branched reaction gas as shown by the arrow (b') is exhausted from the duct 10 provided on the outer furnace wall 1, and on the other hand, the branched flow of reaction gas as shown by the arrow (d) is exhausted from the duct 10' provided on the inner furnace wall 2 as shown by the arrow (e). As a result, the flow of reaction gas on the surface of the wafer 9 becomes uniform. |
