发明名称 PATTERN FORMATION
摘要 PURPOSE:To prevent the deformation of resist pattern during dry-etching process from happening by means of processing resist after exposure with aromatic base organic solvent. CONSTITUTION:A substrate is coated with resist which is to be prebaked. After exposure, if the substrate is immediately immersed in e.g. aromatic base organic solvent such as toluene etc., the surface layer of resist pattern part is solidified. Then the substrate is post-baked to be developed finally. If the resist is processed with aromatic base organic solvent, the resist is solidified and if the resist is processed with the same solvent after exposure, the resist pattern part is solidified. But if the resist is processed before exposure and development, only the surface layer of resist pattern top is solidified to prevent the deformation during the etching process from happening, while the sides of resist pattern are not solidified to facilitate the resist removal after etching process.
申请公布号 JPS61272931(A) 申请公布日期 1986.12.03
申请号 JP19850113986 申请日期 1985.05.29
申请人 FUJITSU LTD 发明人 KOTANI SEIJI
分类号 H01L21/027;G03F7/38;G03F7/40;H01L21/302;H01L21/3065 主分类号 H01L21/027
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