| 摘要 |
PURPOSE:To obtain an excellent flat surface by applying liquefied glass onto the surface of an inorganic insulating film coating a wiring layer and thermally treating the liquiefied glass. CONSTITUTION:An insulating film 12 is formed onto the surface of a semiconductor substrate 10 consisting of silicon, etc., and a wiring metal is applied onto the surface of the film 12 and patterned, thus shaping a first wiring layer 14. An inorganic insulating film 16 is formed onto the whole surface on the substrate 10. Liquefied glass is applied flatly onto the surface of the film 16. The liquefied glass is baked and treated, thus acquiring a glass coating 18. The films 18, 16 are etched at approximately equal etching rates, thus flatly leaving the film 16. An inter-layer insulating film 20 is shaped onto the film 16. A contact holes is formed to the film 20, and a second wiring layer 22 is shaped. |
