| 摘要 |
PURPOSE:To reduce damage in the vicinity of the surface of a semiconductor substrate, and to form a region having high impurity concentration deeply and thickly by implanting ions into the clearances of atomic arrangement in the crystallographic axis direction of the substrate in a process shaping an insulating layer buried into the semiconductor substrate. CONSTITUTION:The ions of an impurity for shaping an insulating film are implanted into the clearances of atomic arrangement in the crystallographic axis direction of a semiconductor substrate, thus reducing damage in the vicinity of the surface of the substrate, then thickly forming an insulating layer up to a deep position. That is, the clearances of atomic arrangement are large when a crystal is viewed from the specific direction in atomic arrangement on a viewing from the surface of the <110> substrate consisting of silicon. Consequently, ions are implanted up to the deep position while drawing ion orbits 3. Accordingly, a region having a long projection range and high impurity concentration is shaped widely. According to the ion implantation, arrangement is not so much put into disorder because of the inhibition of electrons and the crystal is hardly damaged in the loss mechanism of ion implantation energy. |
