| 摘要 |
PURPOSE:To prevent oscillation due to the feedback of a high-frequency signal by inserting a dielectric into a clearance between a bonding-pad metallic plate for a wiring for a semiconductor IC and a metallic plate for grounding. CONSTITUTION:An IC chip 31 for a high-frequency amplification circuit constituted by using a semi-insulating gallium arsenic compound substrate is formed, and bonding-pad metallic plates 33 are shaped from the amplification circuit section 32. A metallic plate 34 for grounding is disposed onto the IC chip 31, and an silicon nitride film, etc. are shaped between the metallic plates 33, 34 as a dielectric 35. A bypass capacitor 41 is shaped to the head section of a bonding wire 36 by forming the dielectric 35, and arranged to the head section of an inductance 42 for the bonding wire, thus preventing high-frequency oscillation. |
