| 摘要 |
PURPOSE:To enhance acceptance potential, and resistances to dark decay and residual potential by simultaneously causing a light of wavelength similar to the absorption energy of a photosensitive layer and a light of wavelength shorter than the absorption energy of a surface protective layer to affect a photosensitive body composed of the a-Si photosensitive layer and the surface protective layer having the absorption energy more than that layer. CONSTITUTION:An a-Si blocking layer BL 2 is formed on the Al substrate 1 of the amorphous silicon (a-Si) photosensitive body, on this layer 2 an a-Si photosensitive layer CGL 3 high in dark resistance and sensitivity is formed, and on this layer 3, the a-SiC surface protective insulating layer 4 high in abrasion resistance. An absorption energy gap larger than the layer 3 is formed by adding C to this layer 4. The light of wavelength similar to the absorption energy of the layer 3 and the light of wavelength smaller than the absorption energy of the layer 4 and shorter than the layer 3 are simultaneously caused to affect the photosensitive body, thus permitting the obtained photosensitive body to be enhanced each of acceptance potential, resistances to dark decay and residual potential. |
