| 摘要 |
PURPOSE:To obtain a resistance element, a potential drop thereof hardly varies with regard to the dispersion of a process, by connecting a gate electrode and a drain electrode for a MESFET or a JFET and using a section between the gate electrode and a source electrode as the resistance element. CONSTITUTION:Characteristics at a time when a gate and a drain for a FET Q2 are connected and employed as a resistance element are represented by a dotted line A, and a utilizable range is limited in a region on the left side of a curve B representing diode characteristics between the gate and a source for the FET. That is, shift voltage must be kept at the rise voltage VF or less of the curve B. Characteristics are equalized completely by making the gate width of a Q1 and a Q3 shaped through the same manufacturing process uniform, and the gate potential and source potential of the Q1 are made equal approximately. Consequently, potential lower than potential applied to an input terminal 1 only by the quantity of a shift by the Q2 is outputted to an output terminal. even when the drain currents of the FET Q3 are increased by the dispersion of processes, a resistance value lowers because the Q2 is manufactured by the same process, thus preventing the large change of a potential drop by the Q2, i.e. the quantity of a level shift.
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