发明名称 CAP FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To inhibit atmospheric pressure in a semiconductor device, and to avoid the pull-back of sealing glass by forming a through-hole to a low melting- point glass sealing section in a cap for the semiconductor device. CONSTITUTION:When a ceramic cap 5 is superposed to a ceramic case 3 and passed through a belt furnace, sealing glass 4 begins to melt at a point of time when a temperature thereof reaches a sealing-work temperature or higher. Atmospheric pressure in a semiconductor device rises by a gas, and the gas pushes away melted sealing glass 4 and proceeds to shape a pull-back section 9, and is discharged outside the semiconductor device by through-holes 8 formed where corresponding to sealing path sections 6. When the pressure of the outside and inside is reduced, the glass 4 uniformly seals the sealing path sections 6 due to the loading by a clip, and also seals the through-holes 8, thus completing hermetic sealing.
申请公布号 JPS61272953(A) 申请公布日期 1986.12.03
申请号 JP19850114508 申请日期 1985.05.28
申请人 NEC CORP 发明人 TERAJIMA KATSUSHI
分类号 H01L23/02 主分类号 H01L23/02
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