| 摘要 |
PURPOSE:To prevent foreign matters from falling on the substrate surface and from depositing thereon, and thus the quality of the substrate surface from being spoiled, by positioning the substrate to be vapor-grown with the surface faced downwardly, and by supplying reactive gas toward the substrate surface from below. CONSTITUTION:Within the vapor growth tube 11, substrates 13 which are being put on wafer holders mounted to the carrier 12 are moved to the direction of the arrow by the carrying means 14. At the bottom of the vapor growth tube 11, the supplying hole 15 for reaction gas is positioned, and the supplied gas is jetted toward the substrates 13 from below through the mesh 16. Within the vapor growth tube 11 above the carrier having substrates 13 positioned thereon, the heaters 17 is mounted for the purpose of raising the temperature of the substrates. For example, in the case where an oxide film is formed on the surface of a silicon substrate by a continuous vapor growth apparatus, the vapor growth may be done at a substrate temperature of 300-400 deg.C, using reaction gas consisting of mixed silane and oxygen gas. |
