| 摘要 |
PURPOSE:To enable the accurate patterning in a stepped portion, by successive processes of applying a first resist film, applying thereon and patterning a second resist film having good resistance to dry etching, and etching the first resist film as well as the material to be etched with the same etching agent. CONSTITUTION:An aluminium film 12 is adhered on a semiconductor substrate 11 having a stepped portion. Positive resist for exposure to far ultraviolet radiation is applied on the aluminium film to form a thick film 13 and the surface of the film is flattened. A positive resist film for exposure to ultraviolet radiation 14 is applied thereon. The resist film 14 is exposed to ultraviolet radiation and developed to form a resist film pattern 14. Subsequently, dry etching is performed with a chlorine-based gas and with the use of the resist film pattern 14 as a mask so that the resist film 13 is subjected to the reactive ion etching (RIE). The resist film 13 is thereby etched vertically and can be patterned identically with the resist film pattern 14. The dry etching with the chlorine-based gas is further continued so as to pattern the aluminium film 12 as well. |
