| 摘要 |
PURPOSE:To enhance carrier concentration, by providing a super lattice structure, in which gallium arsenide layers and aluminum arsenide layers are alternately laminated, using the aluminum arsenide layer as a non-doped state, and performing atomic plane doping of impurities in the gallium arsenide. CONSTITUTION:On a semi-insulating GaAs substrate 1, a non-doped GaAs layer 2, a super lattice structure 3 and an Si doped N-type GaAs layer 4 are epitaxially grown sequentially. In the super lattice structure 3, non-doped AlAs layers 3A and GaAs layers 3G are alternately laminated on the non-doped GaAs layer 2. In the vicinity of the center of each GaAs layer 3G, Si-atomic- plane doping 3D is performed. Then, source and drain electrodes 5 and a gate electrode 6 are provided. Thus the carrier concentration of the GaAs/AlAs super lattice structure is enhanced, and the thickness of the structure can be made small. |
